View APTGT200A170D3_548449.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT200A170D3
Trench IGBT Power Module
Phase leg
(R)
VCES = 1700V IC = 200A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Kelvin emitter for easy drive * Low stray inductance - M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat
Q1 4 5 Q2 6 7
3
1
2
3 4 5 7 6
2
1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area
TC = 25C Tj = 125C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-3
APTGT200A170D3 - Rev 0
400A@1650V
January, 2004
Continuous Collector Current
TC = 25C TC = 80C TC = 25C
Max ratings 1700 400 200 600 20 1250
Unit V A
APTGT200A170D3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, IC = 7mA VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 Min
1700
Typ
Max 5 2.4 6.4 400
Unit V mA V V nA
5.2
2.0 2.4 5.8
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy
Min
Typ 17 0.6 250 100 850 120 300 100 1000 200 65
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 200A VGE = 0V IF = 200A VR = 900V di/dt =900A/s IF = 200A VR = 900V di/dt =900A/s
Min Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Typ 1.8 1.9 25 50 50 85
Max 2.2
Unit V mJ C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature For terminals Mounting torque To Heatsink Package Weight IGBT Diode
Min
Typ
Max 0.10 0.16 150 125 125 5 5 380
Unit
C/W January, 2004 2-3 APTGT200A170D3 - Rev 0
3500 -40 -40 -40 3 3
V C N.m g
M6 M6
APT website - http://www.advancedpower.com
APTGT200A170D3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
3-3
APTGT200A170D3 - Rev 0
January, 2004

▲Up To Search▲

Price & Availability of APTGT200A170D3

	To Download APTGT200A170D3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .